ChangXin Storage DDR5 Mass Production Breakthrough, Chinese Module Manufacturers Accelerate Expansion

China's main memory module supplier Power recently stated that the 64GB DDR5-5600 RDIMM server module equipped with ChangXin Memory's DDR5 chip has passed multiple tests and is ready for mass supply, delivering to enterprise clients, channel partners, and branded customers. The company also launched the Sinker DDR5 memory module based on ChangXin Memory technology, supporting several mainstream OEM partners including Lenovo, and targeting industrial and enterprise application scenarios.

Independent semiconductor research institute TechInsights confirmed that ChangXin Memory's technological breakthroughs have reached an unprecedented advanced fabrication level in the Chinese market through the teardown analysis of Gloway DDR5 UDIMM modules. ChangXin Memory's latest DDR5 products support a maximum transfer rate of 8,000 Mbps, covering multiple segments such as data center servers, desktop workstations, and high-performance personal computers.

Although ChangXin Memory's 24GB density chip is about a generation behind the most advanced products of Samsung and SK Hynix, industry analysts believe that this progress is a milestone for China's domestic DRAM industry.

ChangXin Memory has submitted a listing application for the STAR Market to the Shanghai Stock Exchange, planning to raise about 29.5 billion yuan (approximately $4.1 billion), with the funds raised mainly used to expand DRAM production capacity. The company's revenue for the first three quarters of 2025 increased by about 90% compared to the previous year, reaching 13.08 billion yuan, with net losses narrowing to 5.98 billion yuan, indicating a clear acceleration of commercialization.

The ongoing tight global DRAM supply has opened a strategic market window for Chinese suppliers. The rise in overseas memory prices, combined with the urgent demand for supply chain security from domestic downstream customers, is driving Chinese server, PC, and storage device manufacturers to speed up the introduction of ChangXin Memory products. A research report from China Merchants Securities defines the current DRAM market as an "AI-driven structural supercycle."

At the same time, Samsung, SK Hynix, and Micron's combined market share still exceeds 90%. ChangXin Memory's scaled breakthroughs exert long-term competitive pressure on the three. It is reported that ChangXin Memory has listed HBM3 (High Bandwidth Memory) as its next strategic goal, planning to achieve mass production by the end of 2026, directly entering the core market of AI accelerator chips.